Paramagnetic defects in annealed ultrathin layers of SiOx, Al2O3, and ZrO2 on (100)Si

Stesmans, A.; Afanas'ev, V. V.
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3792
Academic Journal
Electron spin resonance (ESR) measurements on (100)Si/SiOx/ZrO2 and (100)Si/Al2O3/ZrO2 stacks with nm-thick dielectric layers reveal, upon postdeposition oxidation (PDO) in the range of 650–800 °C, the appearance of various SiO2-characteristic defects, including E′ and EX centers and a 95-G doublet. These defects generally grow during PDO treatment, attesting to significant modification of the SiOx interlayer, and/or additional SiOx interlayer growth. The ESR results on E′ indicate that the SiOx interlayer formed in (100)Si/SiOx/ZrO2 is drastically inferior to standard thermal (100)Si/SiO2, exhibiting over one order of magnitude more O-deficiency centers. The (100)Si/Al2O3 system appears more robust in terms of SiOx interlayer growth, and has better interlayer properties.


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