Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN:Mg interface

Arkun, F. E.; Reed, M. J.; Berkman, E. A.; El-Masry, N. A.; Zavada, J. M.; Reed, M. L.; Bedair, S. M.
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3809
Academic Journal
We report on the dependence of ferromagnetic properties of metalorganic chemical vapor deposition grown GaMnN films on carrier transfer across adjacent layers. We found that the magnetic properties of GaMnN, as a part of GaMnN/GaN:Mg heterostructures, depend on the thickness of both the GaMnN film and the adjacent GaN:Mg layer and on the presence of a wide band gap barrier at this interface. These results are explained based on the occupancy of the Mn energy band and how the occupancy can be altered due to carrier transfer at the GaMnN/GaN:Mg interfaces.


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