Dielectric behavior of PbZr0.52Ti0.48O3 thin films: Intrinsic and extrinsic dielectric responses

Ang, Chen; Yu, Zhi
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3821
Academic Journal
The dc electric-field (E) dependence of the dielectric constant ([variant_greek_epsilon]) in PbZr0.52Ti0.48O3 (PZT) thin films has been studied at cryogenic temperatures in the dc electric-field range of 0–820 kV/cm. Significant suppression of [variant_greek_epsilon] is observed by an application of E up to 400 kV/cm. The relation of [variant_greek_epsilon] versus E can be well described by the “multi-polarization mechanism” model, i.e., [variant_greek_epsilon](E)=[variant_greek_epsilon](0)/[1+α [variant_greek_epsilon](0)3E2]1/3+(Pjxj/[variant_greek_epsilon]0) [cosh(Exj)]-2. By this equation, the field dependence of the extrinsic dielectric response can be subtracted from the whole dielectric response. The results indicate that the analysis of the relation of [variant_greek_epsilon] versus E could be a way to separate the intrinsic and extrinsic contributions in PZT.


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