Ammonia pretreatment for high-κ dielectric growth on silicon

Brewer, R. T.; Ho, M.-T.; Zhang, K. Z.; Goncharova, L. V.; Starodub, D. G.; Gustafsson, T.; Chabal, Y. J.; Moumen, N.
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3830
Academic Journal
Thermal nitridation of H/Si(100) surfaces with NH3 gas has been studied as a pretreatment for atomic layer deposition of Al2O3. The chemical nature of both the nitride interface and the Al2O3 growth was characterized using in situ transmission infrared spectroscopy and medium energy ion scattering. Nitride layers thicker than 3–4 Å provide an effective barrier against interfacial SiO2 formation and promote the nucleation of Al2O3 growth.


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