TITLE

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

AUTHOR(S)
Stassen, A. F.; de Boer, R. W. I.; Iosad, N. N.; Morpurgo, A. F.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3899
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to [variant_greek_epsilon]-1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.
ACCESSION #
14909790

 

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