High-efficiency and low-voltage p-i-n electrophosphorescent organic light-emitting diodes with double-emission layers

He, Gufeng; Pfeiffer, Martin; Leo, Karl; Hofmann, Michael; Birnstock, Jan; Pudzich, Robert; Salbeck, Josef
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3911
Academic Journal
We demonstrate high-efficiency organic light-emitting diodes by incorporating a double-emission layer (D-EML) into p-i-n-type cell architecture. The D-EML is comprised of two layers with ambipolar transport characteristics, both doped with the green phosphorescent dye tris(phenylpyridine)iridium. The D-EML system of two bipolar layers leads to an expansion of the exciton generation region. Due to its self-balancing character, accumulation of charge carriers at the outer interfaces is avoided. Thus, a power efficiency of approximately 77 lm/W and an external quantum efficiency of 19.3% are achieved at 100 cd/m2 with an operating voltage of only 2.65 V. More importantly, the efficiency decays only weakly with increasing brightness, and a power efficiency of 50 lm/W is still obtained even at 4000 cd/m2.


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