TITLE

Kelvin probe force microscopy as a tool for characterizing chemical sensors

AUTHOR(S)
Grover, R.; Carthy, B. Mc; Zhao, Y.; Jabbour, G. E.; Sarid, D.; Laws, G. M.; Takulapalli, B. R.; Thornton, T. J.; Gust, D.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3926
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the use of Kelvin probe force microscopy in measuring the shift of the contact potential difference of micron-scale areas. The experimental results provide important information required for understanding and modeling the electrical characteristics of chemically sensitive field-effect transistors (ChemFETs). The temporal evolution in the shift of the contact potential difference of chemically sensitive monolayers of free-base porphyrin and zinc-porphyrin on exposure to pyridine gas was studied and their different behavior observed. The Kelvin probe force microscopy data on nanometer-scale areas were in agreement with those obtained with a conventional Kelvin probe on centimeter-scale areas. The accuracy of the measured shift in contact potential difference upon exposure to trace amounts of gas indicates the utility of Kelvin probe force microscopy as a means to characterize the operation of exposed-gate ChemFETs.
ACCESSION #
14909781

 

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