Improvement in spatial resolution of plasma-enhanced quantum-well intermixing by stress-inducing dielectric mask

Djie, H. S.; Mei, T.; Arokiaraj, J.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3008
Academic Journal
We report the use of a stress-inducing dielectric mask to improve the spatial resolution of the proximity quantum-well intermixing process. Photoluminescence and Raman spectroscopy were used to study the band gap modification and the spatial resolution using Ar plasma in the InGaAs/InGaAsP laser structure. A spatial resolution of 2.4 μm has been achieved with the presence of an SixNy annealing cap as a stress-inducing mask. The simple technique provides a promising approach of lateral band gap tuning with a high spatial resolution for high-density photonic integrated circuits.


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