Interband cascade lasers grown on GaAs substrates lasing at 4 microns

Hill, Cory J.; Yang, Rui Q.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3014
Academic Journal
Antimonide-based type II interband cascade lasers grown on GaAs substrates have been demonstrated at emission wavelengths longer than 4 μm at temperatures up to 270 K in pulsed-mode operation. Investigations by transmission electron microscopy, atomic force microscopy and x-ray diffraction are presented and discussed to gain insights into material issues such as defects and dislocations associated with device performance.


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