Surface acoustic wave-driven planar light-emitting device

Cecchini, Marco; De Simoni, Giorgio; Piazza, Vincenzo; Beltram, Fabio; Beere, H. E.; Ritchie, D. A.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3020
Academic Journal
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed [Cecchini et al., Appl. Phys. Lett. 82, 636 (2003)]. Current-voltage, light-voltage, and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures.


Related Articles

  • SENSORS & TRANSDUCERS.  // EDN;9/15/2005, Vol. 50 Issue 19, p101 

    This article presents information on several sensors and transducers. Targeting use in resistive-bridge sensors, including pressure transducers, strain gauges and position sensors, the MLX90320 from Melexis calibrates the sensor output by nulling the offset voltage and applying the appropriate...

  • Integrated ultrasonic particle positioning and low excitation light fluorescence imaging. Bernassau, A. L.; Al-Rawhani, M.; Beeley, J.; Cumming, D. R. S. // Applied Physics Letters;12/9/2013, Vol. 103 Issue 24, p244103 

    A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device...

  • Microcavity enhanced vertical-cavity light-emitting diodes. Keller, U.; Jacobovitz-Veselka, G.R.; Cunningham, J.E.; Jan, W.Y.; Tell, B.; Brown-Goebeler, K.F.; Livescu, G. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3085 

    Investigates microcavity enhancement and mode-coupling effects in vertical-cavity light-emitting diode (LED). Measurement of photo and electroluminescence intensity and linewidth; Determination of the electrical-to-optical efficiency; Basis for the microcavity LED design.

  • Applied physics: A light-emitting sandwich filling. Tsutsui, Tetsuo // Nature;12/19/2002-12/26/2002, Vol. 420 Issue 6917, p752 

    Summarizes research on high-efficiency organic light emitting diodes, published in the December 2002 issue of the journal 'Nature.' Design and fabrication; Luminescent properties; Prospects for workable devices.

  • Highly-bright white organic light-emitting diodes based on a single emission layer. Chuen, C. H.; Tao, Y. T. // Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4499 

    A very bright white organic light-emitting diode (OLED) was fabricated with a thin layer of 4-{4-[N-(1-naphthyl)-N-phenylaminiphenyl]}-1,7-diphenyl-3,5-dimethyl-1,7- dihydro-dipyrazolo [3,4-b;4'3'-e]pyridine (PAP-NPA) doped with rubrene as the source of the white emission. Thus, with a simple...

  • Realization of high-efficiency/high-luminance small-molecule organic light-emitting diodes: synergistic effects of siloxane anode functionalization/hole-injection layers, and hole/exciton-blocking/electron-transport layers. Huang, Qinglan; Cui, Ji; Veinot, Jonathan G. C.; Yan, He; Marks, Tobin J. // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p331 

    High-efficiency/high-luminance small-molecule organic light-emitting diodes (OLEDs) are fabricated by combining thin, covalently-bound triarylamine hole injection/adhesion interlayers with hole- and exciton-blocking/electron transport interlayers in tris(8-hydroxyquinolato)aluminum (III)...

  • High-power silicon LEDs with near-band-edge luminescence. Emel'yanov, A. M.; Sobolev, N. A. // Technical Physics Letters;Feb2008, Vol. 34 Issue 2, p166 

    Light-emitting diodes (LEDs) were manufactured by cutting a solar cell with a textured surface area of 21 cm2. The LEDs had an emitting surface area of about 3 cm2 and exhibited room-temperature near-bandedge luminescence with a maximum external quantum efficiency of ∼0.8%. Pumped by a...

  • Eu2+–Mn2+ phosphor saturation in 5 mm light emitting diode lamps. Setlur, A. A.; Shiang, J. J.; Happek, U. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p081104 

    This letter reports on phosphor quenching by saturation, a sublinear phosphor response with excitation intensity, in light emitting diode (LED) packages using 405 nm LEDs and Ca5(PO4)3Cl:Eu2+,Mn2+ phosphors. This saturation is due to the high light flux incident on the phosphors in these LED...

  • Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes. Meneghini, M.; Trivellin, N.; Pavesi, M.; Manfredi, M.; Zehnder, U.; Hahn, B.; Meneghesso, G.; Zanoni, E. // Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p173507 

    This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and luminescence in light-emitting diodes based on InGaN. The results of the analysis suggest that (i) the main mechanism responsible for leakage current conduction is tunneling, (ii) leakage...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics