Origin of the green photoluminescence from zinc sulfide nanobelts

Ye, Changhui; Fang, Xiaosheng; Li, Guanghai; Zhang, Lide
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3035
Academic Journal
ZnS nanobelts with a pure wurtzite phase have been synthesized by a thermal evaporation method with the assistance of H2S in an Ar atmosphere. Photoluminescence band centered at about 535 nm has been observed under excitation in the range of 250–480 nm with decay rate as short as 860 ps. The origin of this intense photoluminescence is related to elemental sulfur species on the surface of the ZnS nanobelts. This assignment is substantiated by structural analysis by high-resolution electron microscopy, x-ray photoelectron spectroscopy, and photoluminescence and excitation technique. ZnS nanobelts with intense surface photoluminescence could be used as effective green light emitters, humid sensors, and UV light detectors.


Related Articles

  • Communication: Remarkable electrophilicity of the oxalic acid monomer: An anion photoelectron spectroscopy and theoretical study. Buonaugurio, Angela; Graham, Jacob; Buytendyk, Allyson; Bowen, Kit H.; Ryder, Matthew R.; Keolopile, Zibo G.; Haranczyk, Maciej; Gutowski, Maciej // Journal of Chemical Physics;6/14/2014, Vol. 140 Issue 22, p221103-1 

    Our experimental and computational results demonstrate an unusual electrophilicity of oxalic acid, the simplest dicarboxylic acid. The monomer is characterized by an adiabatic electron affinity and electron vertical detachment energy of 0.72 and 1.08 eV (±0.05 eV), respectively. The...

  • Indium stability on InGaAs during atomic H surface cleaning. Aguirre-Tostado, F. S.; Milojevic, M.; Hinkle, C. L.; Vogel, E. M.; Wallace, R. M.; McDonnell, S.; Hughes, G. J. // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p171906 

    Atomic H exposure of a GaAs surface at 390 °C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this...

  • Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC. Mahapatra, R.; Chakraborty, Amit K.; Horsfall, A. B.; Chattopadhyay, S.; Wright, N. G.; Coleman, Karl S. // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p024105 

    HfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by deposition of metallic Hf in an electron beam evaporation system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric HfO2 films. There is no evidence of formation of hafnium...

  • Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates. Chi, David; McIntyre, Paul C. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4699 

    We report on the use of ultraviolet-ozone (UVO) oxidation of thin film hafnium and zirconium to fabricate high-dielectric constant (high-k) gate oxides with chemically modified silicon dioxide-based interface layers on silicon (100) substrates. Using x-ray photoelectron spectroscopy and...

  • Electroforming and endurance behavior of Al/Pr0.7Ca0.3MnO3/Pt devices. Liao, Zhaoliang; Gao, Peng; Meng, Yang; Zhao, Hongwu; Bai, Xuedong; Zhang, Jiandi; Chen, Dongmin // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p113506 

    We have investigated the electroforming (EF) and resistive switching (RS) of Al/Pr0.7Ca0.3MnO3 (PCMO)/Pt devices by using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy combined with transport measurement. The device prefers EF with positive bias with...

  • Optimizing the immobilization of gold nanoparticles on functionalized silicon surfaces: amine- vs thiol-terminated silane. Ben Haddada, Maroua; Blanchard, Juliette; Casale, Sandra; Krafft, Jean-Marc; Vallée, Anne; Méthivier, Christophe; Boujday, Souhir // Gold Bulletin;Dec2013, Vol. 46 Issue 4, p335 

    Immobilization of gold nanoparticles on planar surfaces is of great interest to many scientific communities; chemists, physicists, biologists, and the various communities working at the interfaces between these disciplines. Controlling the immobilization step, especially nanoparticles dispersion...

  • Photoelectron spectroscopy of anions at 118.2 nm: Observation of high electron binding energies in superhalogens MCl4- (M=Sc, Y, La). Jie Yang; Xue-Bin Wang; Xiao-Peng Xing; Lai-Sheng Wang // Journal of Chemical Physics;5/28/2008, Vol. 128 Issue 20, p201102 

    High energy photon is needed for photoelectron spectroscopy (PES) of anions with high electron binding energies, such as superhalogens and O-rich metal oxide clusters. The highest energy photon used for anion PES in the laboratory has been 157 nm (7.866 eV) from F2 eximer lasers. Here, we report...

  • Size-induced stability and structural transition in monodispersed indium nanoparticles. Balamurugan, B.; Kruis, F. E.; Shivaprasad, S. M.; Dmitrieva, O.; Zähres, H. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083102 

    The present study reports the stability and the physical significance of the size-induced crystallographic structural transition in the gas-phase synthesized monodispersed indium nanoparticles. Transmission electron microscopy and x-ray photoelectron spectroscopy studies reveal that the...

  • X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method. Kuo-Hsing Kao; Shiow-Huey Chuang; Woei-Cherng Wu; Tien-Sheng Chao; Jian-Hao Chen; Ming-Wen Ma; Reui-Hong Gao; Chiang, Michael Y. // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p092907 

    The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k∼40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics