Effect of strain-compensation in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition

Nuntawong, N.; Birudavolu, S.; Hains, C. P.; Huang, S.; Xu, H.; Huffaker, D. L.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3050
Academic Journal
We have introduced tensile layers embedded in a GaAs matrix to compensate compressive strain in stacked 1.3 μm InAs quantum dot (QD) active regions. The effects of the strain compensation are systematically investigated in five-stack and ten-stack QD structures where we have inserted InxGa1-xP (x=0.30 or 0.36) layers. High-resolution x-ray diffraction spectra quantify the overall strain in each sample and indicate >35% strain reduction can be accomplished. Both atomic force and transmission electron microscope images confirm that strain compensation improves material crystallinity and QD uniformity. With aggressive strain compensation, room temperature QD photoluminescence intensity is significantly increased demonstrating a reduced defect density.


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