Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3059
Academic Journal
We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0×104, strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized.


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