TITLE

Layered compound Nb3SiC2 predicted from first-principles theory

AUTHOR(S)
Grechnev, A.; Li, S.; Ahuja, R.; Eriksson, O.; Jansson, U.; Wilhelmsson, O.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3071
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A previously unobserved ternary carbide, Nb3SiC2, belonging to the family of the so-called Mn+1AXn or MAX phases is predicted from first-principles calculations. It has a theoretical bulk modulus of 269 Gpa, which is much higher than that of Ti3SiC2. The new phase is metastable with a formation energy of +0.02 eV/atom. We suggest that the phase may possibly be synthesized using thin film technology. The chemical binding of Nb3SiC2 is investigated using the balanced crystal orbital overlap population indicator and it is found to be dominated by the formation of Nb 4d–C 2p covalent bonds.
ACCESSION #
14909511

 

Related Articles

  • Large second order optical nonlinearity in thermally poled amorphous niobium borophosphate films. Dussauze, Marc; Malakho, Artem; Fargin, Evelyne; Manaud, Jean Pierre; Rodriguez, Vincent; Adamietz, Frederic; Lazoryak, Bogdan // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p013108 

    Thin films of sodium niobium borophosphate glass were deposited on silicon wafer and borosilicate glass substrates by radio frequency sputtering. Thermal poling of the films was performed under various voltage conditions. The chemical composition of the films after poling was controlled by x-ray...

  • Charge carrier lifetime in boron carbide thin films. Ruqiang Bao; Zijie Yan; Chrisey, Douglas B. // Applied Physics Letters;5/9/2011, Vol. 98 Issue 19, p192106 

    Charge carrier lifetime is a critical parameter to improve the conversion efficiency of radioisotope power sources and the sensitivity of neutron detectors based on boron carbide thin films. The effective charge carrier lifetime in B4C boron carbide films has been investigated by using transient...

  • Fracture toughness of polycrystalline silicon carbide thin films. Bellante, J. J.; Kahn, H.; Ballarini, R.; Zorman, C. A.; Mehregany, M.; Heuer, A. H. // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071920 

    Thin film polycrystalline silicon carbide (poly-SiC) doubly clamped microtensile specimens were fabricated using standard micromachining processes, and precracked using microindentation. The poly-SiC had been deposited on Si wafers by atmospheric pressure chemical vapor deposition, a process...

  • Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films. Charrier, A.; Coati, A.; Argunova, T.; Thibaudau, F.; Garreau, Y.; Pinchaux, R.; Forbeaux, I.; Debever, J.-M.; Sauvage-Simkin, M.; Themlin, J.-M. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2479 

    Using grazing-incidence x-ray diffraction and scanning tunneling microscopy (STM), we show that the thermal decomposition of an electronic-grade wafer of 6H-SiC after annealing at increasing temperatures T[sub A] between 1080 and 1320 °C leads to the layer-by-layer growth of unconstrained,...

  • Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process. Xuan, Y.; Hojo, D.; Yasuda, T. // Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5097 

    We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the...

  • Optical modulation processes in thin films based on thermal effects of surface plasmons. Lereu, A. L.; Passian, A.; Goudonnet, J-P.; Thundat, T.; Ferrell, T. L. // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p154101 

    Experimental results are presented for light-on-light modulation at low rates using coupling to nonradiative surface plasmons and their associated thermal effects in a thin gold foil. It is first shown that several modulated Gaussian beams simultaneously exciting surface plasmons in the same...

  • Gate oxide induced switch-on undershoot current observed in thin-film transistors. Yan, Feng; Migliorato, Piero; Hong, Yi; Rana, V.; Ishihara, R.; Hiroshima, Y.; Abe, D.; Inoue, S.; Shimoda, T. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253504 

    The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain....

  • Some views about the controversial dewetting morphology of polystyrene films. Tsui, O. K. C.; Wang, Y. J.; Zhao, H.; Du, B. // European Physical Journal E -- Soft Matter;Nov2003, Vol. 12 Issue 3, p417 

    Comments on a study on the dewetting morphology of polystyrene films. Characteristic of the surface fluctuations that occurred in the study; Number of holes identified in the films; Information on the spinodal rupturing process.

  • The Normal and Inverted Meyer-Neldel Rule in the ac Conductivity. Abdel-Wahab, Fouad // Turkish Journal of Physics;2004, Vol. 28 Issue 2, p133 

    Recently, a new approach has been proposed for the correlated barrier hopping (CBH) model where the ac relaxation time is thought to obey the Meyer-Neldel (MN) rule. This approach gives quantitative agreement with some reliable published experimental data. We report on an experiment involving...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics