Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Berg, J. A. van den; Carter, G.; Armour, D. G.; Werner, M.; Goldberg, R. D.; Collart, E. J. H.; Bailey, P.; Noakes, T. C. Q.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3074
Academic Journal
Damage distributions resulting from 0.1–2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B+ doses and energies investigated a 3–4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B+ ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)].


Related Articles

  • Ion-beam-induced damage formation in CdTe. Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113531 

    Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS...

  • Directional emission from rare earth ions in inverse photonic crystals. Li, M.; Zhang, P.; Li, J.; Zhou, J.; Sinitskii, A.; Abramova, V.; Klimonsky, S. O.; Tretyakov, Y. D. // Applied Physics B: Lasers & Optics;Nov2007, Vol. 89 Issue 2/3, p251 

    Angular distribution of the photoluminescence from trivalent rare earth ions (Eu3+) embedded inside a magnesium silicate photonic crystal with an inverse opal structure is experimentally and theoretically studied. The emission at frequencies near the first stop-band of the photonic crystal is...

  • Wave packet dynamics of resonance decay: An iterative equation approach with application to HCO→H+CO. Gray, Stephen K. // Journal of Chemical Physics;5/1/1992, Vol. 96 Issue 9, p6543 

    Three-dimensional solutions to the time-dependent Schrödinger equation, corresponding to the decay of resonances in the HCO radical, are studied. Theoretical tools to facilitate such studies are discussed. A novel propagation scheme, based on iterative equation equivalents to the...

  • Ferromagnetism in Cr substituted SrMoO3 system. Zhao, B. C.; Sun, Y. P.; Zhang, S. B.; Song, W. H.; Dai, J. M. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p113903 

    Systematic studies of structural, magnetic, electric transport, and specific heat properties have been performed on lightly Cr-doped molybdates SrMo1-xCrxO3 (0≤x≤0.10). Based on the analysis of structural parameter variations, the valence state of the doped Cr ions in SrMo1-xCrxO3...

  • Self-assembled structure of a semidilute solution of polymer mixtures under shear flow. Takebe, Tomoaki; Fujioka, Kiyotoshi; Sawaoka, Ryuji // Journal of Chemical Physics;10/1/1990, Vol. 93 Issue 7, p5271 

    The domain structure self-assembled under a steady Couette flow was investigated on a semidilute solution of polymer mixture (polymer A + polymer B + solvent) at a composition near the critical one by use of the in situ light scattering method. This method permits a quantitative analysis of the...

  • A simple formula for the dielectric constant of a solution. Becker, Roger J. // Journal of Applied Physics;2/1/1987, Vol. 61 Issue 3, p1123 

    Presents the derivation of a formula for the dielectric constant of a single-phase solution. Details of the derivation procedure; Description of Rayleigh scattering from inhomogeneities; Use in estimating the relative contributions to scattering losses from various defects in a solid solution.

  • Experimental studies of complex crater formation under cluster implantation of solids. Prasalovich, S.; Popok, V.; Persson, P.; Campbell, E. E.B. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Oct2005, Vol. 36 Issue 1, p79 

    The results of a systematic study of surface defect formation after energetic Arn+ (n = 12, 22, 32, 54) and Xen+ (n = 4, 16) cluster ion implantation into silicon and sapphire are presented. Implantation energies vary from 3 to 18 keV/ion. Two cases of comparative studies are carried out: the...

  • Products of Ag+, Cu+ and Cu2+ Ion Implantation in the Surface of Polycrystalline Cadmium Sulfide as Photocatalysts for the Oxidation–Reduction Reaction of Methylene Blue with Formaldehyde. Kobasa, I.M.; Tarasenko, G.P. // Theoretical & Experimental Chemistry;Mar2003, Vol. 39 Issue 2, p115 

    Semiconductor-semiconductor and molecule (molecular ion) -semiconductor products are formed upon the implantation of Ag+ Cu+ and Cu2+ ions in the CdS surface. Possible mechanisms were examined for their photocatalytic action in the reduction of methylene blue.

  • THE USE OF ION IMPLANTATION DAMAGE FOR THERMOSENSITIVE LAYER FORMATION IN HPHT DIAMOND. Rusetsky, M. S.; Kazuchits, N. M.; Naumchik, E. V. // International Conference: Radiation Interaction with Material & ;2012, p320 

    Conductivity and activation energy of HPHT synthetic diamonds implanted with phosphorus ions have been investigated. It is shown that ion implantation with dose in the vicinity of graphitization threshold and subsequent annealing can be used for formation of temperature sensors with parameters...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics