TITLE

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

AUTHOR(S)
Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi; Makimoto, Toshiki
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3089
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.
ACCESSION #
14909505

 

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