TITLE

Increased terahertz emission from thermally treated GaSb

AUTHOR(S)
Winnerl, S.; Sinning, S.; Dekorsy, T.; Helm, M.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the terahertz (THz) emission from GaSb surfaces with modified surface stochiometry. While very weak emission is observed from virgin GaSb wafers, the emission is significantly increased by a single thermal treatment of the wafers. Optimum emission is observed for 500 °C thermal annealing. The reason for the THz emission is a surface electric field induced by thermal decomposition of the surface, as corroborated by Raman spectroscopy.
ACCESSION #
14909504

 

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