TITLE

Structural and electrical properties of trimethylboron-doped silicon nanowires

AUTHOR(S)
Lew, Kok-Keong; Pan, Ling; Bogart, Timothy E.; Dilts, Sarah M.; Dickey, Elizabeth C.; Redwing, Joan M.; Wang, Yanfeng; Cabassi, Marco; Mayer, Theresa S.; Novak, Steven W.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor–liquid–solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B2H6) sources. Boron concentrations ranging from 1×1018 to 4×1019 cm-3 were obtained by varying the inlet dopant/SiH4 gas ratio. TEM characterization revealed that the B2H6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B2H6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.
ACCESSION #
14909501

 

Related Articles

  • Fluorine-vacancy complexes in Si-SiGe-Si structures. Abdulmalik, D. A.; Coleman, P. G.; El Mubarek, H. A. W.; Ashburn, P. // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p013530 

    Fluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via interstitial...

  • Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates. Yeo, K. L.; Wee, A. T. S.; Chong, Y. F. // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p3692 

    We present a study on the redistribution of boron in (100) crystalline silicon and silicon-on-insulator (SOI) substrates after rapid thermal processing (RTP). The use of SOI back-side secondary ion mass spectrometry (SIMS) technique in obtaining an accurate diffusion profile is also...

  • Compensation mechanism in high purity semi-insulating 4H-SiC. Mitchel, W. C.; Mitchell, William D.; Smith, H. E.; Landis, G.; Smith, S. R.; Glaser, E. R. // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p053716 

    A study of deep levels in high purity semi-insulating 4H-SiC has been made using temperature dependent Hall effect (TDH), thermal and optical admittance spectroscopies, and secondary ion mass spectrometry (SIMS). Thermal activation energies from TDH varied from a low of 0.55 eV to a high of 1.65...

  • Ex situ doping of silicon nanowires with boron. Ingole, S.; Aella, P.; Manandhar, P.; Chikkannanavar, S. B.; Akhadov, E. A.; Smith, D. J.; Picraux, S. T. // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p104302 

    An ex situ proximity technique is demonstrated for the electrical doping of silicon nanowires with spin on dopant (SOD) used as the boron source. The technique is based on solid-state diffusion and is comprised of two stages: predeposition and drive in. During predeposition, a predetermined...

  • Thermodynamic mechanism of nickel silicide nanowire growth. Kim, Joondong // Applied Physics Letters;12/3/2012, Vol. 101 Issue 23, p233103 

    A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at 375 °C leading long and high-density NiSi NWs....

  • Electrical Measurements By Scanning Spreading Resistance Microscopy: Application To Carbon Nanofibers And Si Nanowires. Chevalier, N.; Mariolle, D.; Fourdrinier, L.; Celle, C.; Mouchet, C.; Poncet, S.; Simonato, J. P.; Le Poche, H.; Rouviere, E.; Bertin, F.; Chabli, A. // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p285 

    We report the electrical characterization of vertically aligned nano-objects by Scanning Spreading Resistance Microscopy (SSRM). In this paper, we show that this method is well suited to evaluate the individual electrical properties of carbon nanofibers and of n-doped silicon nanowires. In the...

  • p-type conduction in N–Al co-doped ZnO thin films. Lu, J. G.; Ye, Z. Z.; Zhuge, F.; Zeng, Y. J.; Zhao, B. H.; Zhu, L. P. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3134 

    p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of...

  • B diffusion in implanted Ni2Si and NiSi layers. Blum, I.; Portavoce, A.; Chow, L.; Mangelinck, D.; Hoummada, K.; Tellouche, G.; Carron, V. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p054102 

    B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400–550 °C). B diffusion appears...

  • Diagnostics of YBa2Cu3O7-δ laser plume by time-of-flight mass spectrometry. Berardi, V.; Amoruso, S.; Spinelli, N.; Armenante, M.; Velotta, R.; Fuso, F.; Allegrini, M.; Arimondo, E. // Journal of Applied Physics;12/15/1994, Vol. 76 Issue 12, p8077 

    Presents a study which used the time-of-flight mass spectrometry to investigate the formation of charged species in the laser ablation of YBCO target. Measurement of mass spectra in both high vacuum and in oxygen environment for two values; Formation of heavy species and YBCO clusters.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics