Pt/ZnO nanowire Schottky diodes

Heo, Y. W.; Tien, L. C.; Norton, D. P.; Pearton, S. J.; Kang, B. S.; Ren, F.; LaRoche, J. R.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3107
Academic Journal
Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 °C and very low (1.5×10-10 A, equivalent to 2.35 A cm-2, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current–voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.


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