Subpicosecond exciton spin relaxation in GaN

Kuroda, T.; Yabushita, T.; Kosuge, T.; Tackeuchi, A.; Taniguchi, K.; Chinone, T.; Horio, N.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3116
Academic Journal
The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time Ï„s is found to be proportional to T-1.4, where T is the temperature.


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