Unified explanation for suppressed electron ionization coefficient and its weak temperature dependence in InGaP

Neo, Wah-Peng; Wang, Hong
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3119
Academic Journal
Experimental evidence of electron multiplication, extracted from InGaP–GaAs–InGaP double heterojunction bipolar transistors, reveals a suppressed electron impact ionization coefficient, αn, with weak temperature dependence in InGaP compared to those measured from binary InP and GaP, which could not be predicted by the widely used Okuto–Crowell relation assuming that the optical phonon scattering is the only dominant scattering process during impact ionization. We show that discrepancies between the experimental data and the Okuto–Crowell relation can be consistently ascribed to the involvement of alloy scattering. This provides an improved insight into understanding the presence of alloy scattering on carrier impact ionization behavior in InGaP.


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