TITLE

Efficient radiative recombination from [formula] -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

AUTHOR(S)
Nishizuka, K.; Funato, M.; Kawakami, Y.; Fujita, Sg.; Narukawa, Y.; Mukai, T.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3122
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InxGa1-xN multiple quantum wells (QWs) with [0001], (1122), and (1120) orientations have been fabricated by means of the regrowth technique on patterned GaN template with striped geometry, normal planes of which are (0001) and {1120}, on sapphire substmtes. It was found that photoluminescence intensity of the {1122} QW is the strongest among the three QWs, and the internal quantum efliciency of the {1122} QW was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {1122} QW was about 0.38 ns at low temperature, which was 3.8 times shorter than that of conventional [0001]-oriented InxGa1-xN QWs emitting at a similar wavelength of about 400 nm. These findings strongly suggest the achievement of stronger oscillator strength owing to the suppression of piezoelectric fields.
ACCESSION #
14909494

 

Related Articles

  • Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. Wang, J.-B.; Johnson, S. R.; Chaparro, S. A.; Gupta, J. A.; Sadofyev, Yu. G.; Ding, D.; Zhang, Y.-H. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p399 

    Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs0.643Sb0.357/GaAs quantum well is determined to have a weak type-I (almost flat) conduction band alignment over the entire...

  • Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers. Huang, C. C.; Xu, F. J.; Song, J.; Xu, Z. Y.; Wang, J. M.; Zhu, R.; Chen, G.; Wang, X. Q.; Yang, Z. J.; Shen, B.; Chen, X. S.; Lu, W. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 1, p016105 

    Strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells (MQWs) grown on GaN/sapphire templates with either AlN/GaN supperlattices (SLs) or low-temperature AlN (LT-AlN) interlayers (ILs) between the MQWs and templates have been investigated. These two IL techniques can both...

  • Broad-area optical characterization of well-width homogeneity in GaN/Al[sub x]Ga[sub 1-x]N multiple quantum wells grown on sapphire wafers. Pomarico, A.; Lomascolo, M.; Passaseo, A.; Cingolani, R.; Berti, M.; Napolitani, E.; Natali, M.; Sinha, S. K.; Sinha, S.K.; Drigo, A. V.; Drigo, A.V. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    We have performed spatially resolved photoluminescence spectroscopy on the entire 2 in. sapphire wafers containing GaN/Al[sub x]Ga[sub 1-x]N multiple quantum wells grown by metalorganic chemical vapor deposition. We have observed an energy shift of about 50 meV in the ground level emission...

  • Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells. Wang, Y.; Pei, X. J.; Xing, Z. G.; Guo, L. W.; Jia, H. Q.; Chen, H.; Zhou, J. M. // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p061902 

    Tunneling-assisted carrier transfer in coupled double InGaN/GaN quantum wells (QWs) has been studied by temperature-dependent photoluminescence (PL) at varied excitation density. It is found that the carriers captured by the wide (“deep”) well are efficiently transferred to the...

  • Optical properties of a Si delta-doped InGaN/GaN quantum well with ultraviolet emission. Kwon, Min-Ki; Park, Il-Kyu; Kim, Ja-Yeon; Kim, Jeom-Oh; Seo, Seong-Bum; Park, Seong-Ju; Min, Kyeongik; Park, Gil-Han // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p073115 

    We report on the effect of the position of the Si delta-doped layer within a GaN barrier layer on the optical properties of a InGaN/GaN single quantum well (SQW) with an emission wavelength of 374 nm. When the Si delta-doped layer was very close to the SQW layer, the potential well of the Si...

  • Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells. Kuokstis, E.; Yang, J. W.; Simin, G.; Khan, M. Asif; Gaska, R.; Shur, M. S. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p977 

    We present the results of a comparative photoluminescence (PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells (MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers,...

  • Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells. Wang, T.; Nakagawa, D.; Wang, J.; Sugahara, T.; Sakai, S. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    The photoluminescence investigation at a low temperature was carried out in In[sub 0.13]Ga[sub 0.87]N/GaN single quantum well (SQW) and multiple quantum wells with 10 (10QW) or 5 periods. With decreasing number of wells, the emission peak shows a redshift. In the case of a low excitation power,...

  • Comparison of Si doping effect in optical properties of GaN epilayers and In[sub x]Ga[sub 1-x]N quantum wells. Oh, Eunsoon; Eunsoon Oh; Sone, Cheolsoo; Cheolsoo Sone; Nam, Okhyun; Okhyun Nam; Park, Hyeongsoo; Hyaeongsoo Park; Park, Yongjo; Yongjo Park // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In[sub 0.1]Ga[sub 0.9]N/In[sub 0.02]Ga[sub 0.98]N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be...

  • Photoluminescence from sub-nanometer-thick GaN/Al[sub 0.8]Ga[sub 0.2]N quantum wells. Someya, T.; Hoshino, K.; Harris, J. C.; Tachibana, K.; Arakawa, Y. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN quantum wells (QWs) with Al[sub 0.8]Ga[sub 0.2]N barriers, which were grown by atmospheric-pressure metal-organic chemical-vapor deposition. The thickness of the GaN QW layers was systematically varied from 1 to 4 ML. We...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics