Efficient radiative recombination from [formula] -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

Nishizuka, K.; Funato, M.; Kawakami, Y.; Fujita, Sg.; Narukawa, Y.; Mukai, T.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3122
Academic Journal
InxGa1-xN multiple quantum wells (QWs) with [0001], (1122), and (1120) orientations have been fabricated by means of the regrowth technique on patterned GaN template with striped geometry, normal planes of which are (0001) and {1120}, on sapphire substmtes. It was found that photoluminescence intensity of the {1122} QW is the strongest among the three QWs, and the internal quantum efliciency of the {1122} QW was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {1122} QW was about 0.38 ns at low temperature, which was 3.8 times shorter than that of conventional [0001]-oriented InxGa1-xN QWs emitting at a similar wavelength of about 400 nm. These findings strongly suggest the achievement of stronger oscillator strength owing to the suppression of piezoelectric fields.


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