TITLE

Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

AUTHOR(S)
Lu, J.; Shen, B.; Tang, N.; Chen, D. J.; Zhao, H.; Liu, D. W.; Zhang, R.; Shi, Y.; Zheng, Y. D.; Qiu, Z. J.; Gui, Y. S.; Zhu, B.; Yao, W.; Chu, J. H.; Hoshino, K.; Arakawa, Y.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time Ï„e, dephasing time Ï„[lowercase_phi_synonym] and spin-orbit scattering time Ï„so at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.
ACCESSION #
14909493

 

Related Articles

  • Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures. Dmitriev, D.; Strygin, I.; Bykov, A.; Dietrich, S.; Vitkalov, S. // JETP Letters;Jun2012, Vol. 95 Issue 8, p420 

    Low-temperature dependences of the transport relaxation time (Ï„) and quantum lifetime (Ï„) on the density of the two-dimensional electron gas ( n) in GaAs quantum wells with AlAs/GaAs lateral superlattice barriers have been studied. An exponential increase in the quantum lifetime with...

  • Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at Al[sub x]Ga[sub 1-x]N/GaN heterointerfaces. Zheng, Z. W.; Shen, B.; Gui, Y. S.; Jiang, C. P.; Tang, N.; Zhang, R.; Shi, Y.; Zheng, Y. D.; Guo, S. L.; Zheng, G. Z.; Chu, J. H.; Someya, T.; Arakawa, Y. // Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1872 

    Magnetotransport properties of modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures were investigated by means of magnetoresistance measurements at low temperatures and high magnetic fields. Strong Shubnikov-de Haas oscillations with the double periodicity are observed. The mobility...

  • Quantum transport studies of grain boundaries in p-Hg1-xMnxTe. Grabecki, G.; Dietl, T.; Sobkowicz, P.; Kossut, J.; Zawadzki, W. // Applied Physics Letters;1984, Vol. 45 Issue 11, p1214 

    We show that charged traps at grain boundaries in p-Hg1-xMnxTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov-de Haas effect measurements we demonstrate that the electron gas in the layer...

  • Influence of the illumination on the subband structure and occupation in Al xGa1− xN/GaN heterostructures. Ning Tang; Bo Shen; Kui Han; Xiao-Wei He; Chun-Ming Yin; Zhi-Jian Yang; Qin, Zhi-Xin; Guo-Yi Zhang; Tie Lin; Wen-Zheng Zhou; Li-Yan Shang; Jun-Hao Chu // Applied Physics A: Materials Science & Processing;Sep2009, Vol. 96 Issue 4, p953 

    The subband structure and occupation in the triangular quantum well at Al xGa1− xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the...

  • Alloy-disorder scattering of the interacting electron gas in quantum wells and heterostructures of AlGaAs. Gold, A. // JETP Letters;Dec2013, Vol. 98 Issue 7, p416 

    The question whether alloy disorder is screened or unscreened is of fundamental importance. Therefore, we calculate the mobility of the interacting two-dimensional electron gas as realized in AlGaAs quantum wells and heterostructures in the presence of alloy-disorder scattering. For the...

  • Overheating effect and hole-phonon interaction in SiGe heterostructures. Berkutov, I. B.; Andrievskii, V. V.; Komnik, Yu. F.; Myronov, M.; Mironov, O. A. // Low Temperature Physics;Nov2008, Vol. 34 Issue 11, p943 

    The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov–de Haas (SdH) oscillation amplitude is used as a “thermometer” to measure the temperature of overheated holes....

  • Beating patterns in the oscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaN heterostructures. Tang, N.; Shen, B.; Wang, M. J.; Han, K.; Yang, Z. J.; Xu, K.; Zhang, G. Y.; Lin, T.; Zhu, B.; Zhou, W. Z.; Chu, J. H. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p172112 

    Beating patterns in the oscillatory magnetoresistance in Al0.11Ga0.89N/GaN heterostructures with one subband occupation have been investigated by means of temperature dependent Shubnikov–de Haas measurements at low temperatures and high magnetic fields. The zero-field spin splitting...

  • Influence of ground state correlations on the quantum well intersubband absorption at low temperatures. Dang, Thi Uyen-Khanh; Weber, Carsten; Richter, Marten; Knorr, Andreas // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p437 

    We present a theory for the intersubband optics of a doped semiconductor quantum well including Coulomb ground state correlations of the confined interacting electron gas. We find that the electronic ground state correlations lead to a significant broadening of the intersubband absorption...

  • Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. Gilbertson, A. M.; Benstock, D.; Fearn, M.; Kormányos, A.; Ladak, S.; Emeny, M. T.; Lambert, C. J.; Ashley, T.; Solin, S. A.; Cohen, L. F. // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p062106 

    We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1-xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics