p-type conduction in N–Al co-doped ZnO thin films

Lu, J. G.; Ye, Z. Z.; Zhuge, F.; Zeng, Y. J.; Zhao, B. H.; Zhu, L. P.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3134
Academic Journal
p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of 0.43 cm2/V s and carrier concentration of 2.25×1017 cm-3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region.


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