Ultrahigh room-temperature hole mobility in a SiGe quantum well

Myronov, M.; Parry, C. P.; Mironov, O. A.; Parker, E. H. C.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3145
Academic Journal
We report an ultrahigh room-temperature hole drift mobility obtained in a Si0.2Ge0.8 quantum well with a parabolic-like Ge profile, which has at its core a p-type modulation-doped (MOD) Si/Si0.2Ge0.8/Si0.65Ge0.35/Si(001) heterostructure. High-conductivity holes at 293 K with a drift mobility of 3600 cm2 V-1 s-1 at a sheet carrier density of 4.94×1012 cm-2 were obtained in the Si0.2Ge0.8 quantum well after optimum annealing at 750 °C for 30 min. Hall mobility and sheet carrier density of this heterostructure are 1776 cm2 V-1 s-1 and 2.37×1013 cm-2, respectively. Structural characterization of the as-grown and the annealed samples revealed that the annealing had caused Si0.2Ge0.8 channel broadening, smearing of interfaces, and formation of a parabolic-like Ge profile that significantly improved room-temperature hole transport properties. The reported values of hole mobility are much higher than in the bulk Ge.


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