Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition

Gardelis, S.; Androulakis, J.; Giapintzakis, J.; Monnereau, O.; Buckle, P. D.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3178
Academic Journal
We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200 °C by pulsed laser deposition. The films exhibit saturation magnetization of 4 μB/formula unit at 5 K and coercive fields of 2 Oe at 300 K indicative of their good structural quality. At low temperatures (T<200 K) the system behaves like a Heisenberg ferromagnet as expected for a half-metal, while at T>200 K it behaves like an itinerant ferromagnet. The resistivity of the film at 5 K is 6 μΩ cm.


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