Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

Maeda, Tatsuro; Yasuda, Tetsuji; Nishizawa, Masayasu; Miyata, Noriyuki; Morita, Yukinori; Takagi, Shinichi
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3181
Academic Journal
We have fabricated Ge metal-insulator-semiconductor structures with ultrathin pure germanium nitride (Ge3N4) films by the direct nitridation of germanium (Ge) substrates. The plasma-enhanced nitridation technique was used with dc plasma source at low temperatures. Capacitance–voltage characteristics with no hysteresis and capacitance equivalent thickness of 1.23 nm have been achieved.


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