La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy

Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Apostolopoulos, G.; Travlos, A.; Wiemer, C.; Fanciulli, M.; Rittersma, Z. M.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3205
Academic Journal
We show that at deposition temperature in the 750–770 °C range, the La2Hf2O7 (LHO) compound can be grown crystalline on Si(001). The predominant orientation is (001)LHO//(001)Si and [110]LHO//[110]Si and results in ultimately clean interfaces, indicating a strong tendency for cube-on-cube epitaxy. The ordered pyrochlore and random fluorite phases coexist in the dielectric. Acceptable gate leakage current, negligible hysteresis and high dielectric permittivity κ∼23 were obtained from electrical characterization of metal–insulator–semiconductor capacitors. The quality of interfaces and the good electrical characteristics make crystalline LHO a promising high-κ candidate for the replacement of SiO2 in the gate of future aggressively scaled transistors.


Related Articles

  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric. Goel, N.; Majhi, P.; Tsai, W.; Warusawithana, M.; Schlom, D. G.; Santos, M. B.; Harris, J. S.; Nishi, Y. // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p093509 

    The structure and electrical properties of LaAlO3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors deposited by molecular-beam epitaxy were investigated. Transmission electron microscopy revealed a sharp interface between the dielectric and InGaAs. Postdeposition annealing at 440–500...

  • Electronic properties of ferroelectric BaTiO3/MgO capacitors on GaAs. Murphy, T. E.; Chen, D.; Phillips, J. D. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3208 

    Thin films of MgO and BaTiO3 were deposited on (001) GaAs substrates using molecular beam epitaxy and pulsed laser deposition, respectively. X-ray diffraction scans indicate crystalline MgO and BaTiO3 thin films with preferential c-axis orientation. Capacitors fabricated from the BaTiO3/MgO/GaAs...

  • Critical thickness in epitaxial CdTe/ZnTe. Cibert, J.; Gobil, Y.; Dang, Le Si; Tatarenko, S.; Feuillet, G.; Jouneau, P. H.; Saminadayar, K. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p292 

    The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As...

  • Gas source iodine n-type doping of molecular beam epitaxially grown CdTe. Rajavel, D.; Summers, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231 

    Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal...

  • Ion implantation into heteroepitaxial Cd xHg1� xTe grown by molecular-beam epitaxy. Voitsekhovskii, A.; Grigor�ev, D.; Talipov, N. // Russian Physics Journal;Oct2008, Vol. 51 Issue 10, p1001 

    The results of investigations into the electrophysical properties of heteroepitaxial semiconductor material CdHgTe (CMT) grown by molecular-beam epitaxy (MBE) after ion implantation are reported. The major factors responsible for the differences between ion implantation in bulk CMT crystals and...

  • Properties of (Ge2)x(GaAs)1-x alloys grown by molecular beam epitaxy. Banerjee, Indrajit; Chung, Don W.; Kroemer, Herbert // Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p494 

    Single-crystalline (Ge2)x(GaAs)1-x alloys have been grown by molecular beam epitaxy on GaAs (100) substrates at substrate temperatures of 550 and 430 °C. The structure of these alloys has been studied using transmission electron microscopy. We observe that growths done at 550 °C show a...

  • All-MgB2 Josephson tunnel junctions. Ueda, K.; Saito, S.; Semba, K.; Makimoto, T.; Naito, M. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172502 

    Sandwich-type all-MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated with as-grown MgB2 films formed by molecular-beam epitaxy. The junctions exhibit substantial superconducting current (IcRN product ∼0.8 mV at 4.2 K), a well-defined superconducting gap...

  • Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111). Ueda, K.; Hamaya, K.; Yamamoto, K.; Ando, Y.; Sadoh, T.; Maeda, Y.; Miyao, M. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112108 

    We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe2MnSi/Ge(111) layers have an atomic-scale abrupt interface and include the ordered L21...

  • Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy. Yang, C. S.; Lai, Y. J.; Chou, W. C.; Chen, W. K.; Lee, M. C.; Kuo, M. C.; Lee, J.; Shen, J. L.; Jang, D. J.; Cheng, Y. C. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p033514 

    The morphology and the size-dependent photoluminescence (PL) spectra of the type-II ZnTe quantum dots (QDs) grown in a ZnSe matrix were obtained. The coverage of ZnTe varied from 2.5 to 3.5 monolayers (MLs). The PL peak energy decreased as the dot size increased. Excitation power and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics