La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy

Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Apostolopoulos, G.; Travlos, A.; Wiemer, C.; Fanciulli, M.; Rittersma, Z. M.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3205
Academic Journal
We show that at deposition temperature in the 750–770 °C range, the La2Hf2O7 (LHO) compound can be grown crystalline on Si(001). The predominant orientation is (001)LHO//(001)Si and [110]LHO//[110]Si and results in ultimately clean interfaces, indicating a strong tendency for cube-on-cube epitaxy. The ordered pyrochlore and random fluorite phases coexist in the dielectric. Acceptable gate leakage current, negligible hysteresis and high dielectric permittivity κ∼23 were obtained from electrical characterization of metal–insulator–semiconductor capacitors. The quality of interfaces and the good electrical characteristics make crystalline LHO a promising high-κ candidate for the replacement of SiO2 in the gate of future aggressively scaled transistors.


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