Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon

Johnson, S.; Markwitz, A.; Rudolphi, M.; Baumann, H.; Oei, S. P.; Teo, K. B. K.; Milne, W. I.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3277
Academic Journal
This letter considers field emission from self-assembled silicon nanostructure arrays fabricated on n- and p-type silicon (100) substrates using electron beam rapid thermal annealing. Arrays of nanostructures with an average height of 8 nm were formed by substrate annealing at 1100 °C for 15 s. Following conditioning, the Si nanostructure field emission characteristics become stable and reproducible with Fowler–Nordheim tunneling occurring for fields as low as 2 V μm-1. At higher fields, current saturation effects are observed for both n-type and p-type samples. These studies suggest that the mechanism influencing current saturation at high fields acts independently of substrate conduction type.


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