Vertical electrochemical transistor based on poly(3-hexylthiophene) and cyanoethylpullulan

Taniguchi, Masateru; Kawai, Tomoji
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3298
Academic Journal
We have fabricated an all-solid state and vertical electrochemical transistor, which employs poly(3-hexylthiophene) and cyanoethylpullulan as the semiconducting layer and solid electrolyte, respectively. The device has the same structure as a vertical field effect transistor, but can function using a different mechanism of operation in which the doping and dedoping to polythiophene are controlled by the gate voltage and the source–drain current is modulated by the doping–dedoping process. The transistor behaves like p-channel accumulation-mode devices and has a switching speed of 50 Hz in vacuum.


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