All jet-printed polymer thin-film transistor active-matrix backplanes

Arias, A. C.; Ready, S. E.; Lujan, R.; Wong, W. S.; Paul, K. E.; Salleo, A.; Chabinyc, M. L.; Apte, R.; Street, Robert A.; Wu, Y.; Liu, P.; Ong, B.
October 2004
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3304
Academic Journal
Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340 μm pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06 cm2/Vs, on/off ratios of 106, and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays.


Related Articles

  • High-mobility and air-stable organic thin-film transistors with highly ordered semiconducting polymer films. Umeda, Tokiyoshi; Tokito, Shizuo; Kumaki, Daisuke // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p054517 

    We report on high crystalline thin films of liquid-crystalline polythiophene derivative, poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) (PB16TTT) that exhibit terrace structures and molecular steps of its polymer chains by annealing in its liquid-crystalline phase. The...

  • Effects of order and disorder on field-effect mobilities measured in conjugated polymer thin-film transistors. Holland, E. R.; Bloor, D.; Monkman, A. P.; Brown, A.; De Leeuw, D.; Bouman, M. M.; Meijer, E. W. // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p7954 

    Investigates the effects of order and disorder on field-effect mobilities measured in conjugated polymer thin-film transistors. Interest in the use of conjugated polymers as active semiconductor in field-effect transistors; Experimental details; Result of the study.

  • Transient drain current of polymer transistors. Fujieda, Ichiro; Street, Robert A. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    We have measured transient drain current in millisecond range for some poly(thiophene) transistors with different channel length. Under fixed gate bias and with source grounded, a voltage pulse is applied periodically to the drain and the current waveform is recorded. The drain current of a 50...

  • Highly oriented crystals at the buried interface in polythiophene thin-film transistors. Kline, R. Joseph; McGehee, Michael D.; Toney, Michael F. // Nature Materials;Mar2006, Vol. 5 Issue 3, p222 

    Thin films of polymer semiconductors are being intensively investigated for large-area electronics applications such as light-emitting diodes, photovoltaic cells and thin-film transistors. Understanding the relationship between film morphology and charge transport is key to improving the...

  • Crystallitic orientation effects on charge transport in polythiophene thin-film transistors. Liping Zhou; Xue-Feng Wang; Qin Han; Jian-Chun Wu; Zhen-Ya Li // Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p063301 

    We simulate charge transport through polymer grain boundaries under the buried critical interface of polymer and dielectric in polythiophene thin-film transistors and find the recently observed enhancement of electronic conduction can be a result of optimized crystallitic orientation. The...

  • Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors. Salleo, A.; Endicott, F.; Street, R. A. // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263505 

    We measured the bias stress characteristics of poly(thiophene) semicrystalline thin-film transistors (TFTs) as a function stress times, gate voltages, and duty cycles. At room temperature, the bias stress has two components: a fast reversible component and a slow long-lived component. We...

  • Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors. Wu, Yiliang; Liu, Ping; Ong, Beng S.; Srikumar, Tharan; Zhao, Ni; Botton, Gianluigi; Zhu, Shiping // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p142102 

    The silane self-assembled monolayer (SAM) modification of a SiO2 gate dielectric surface improved the molecular ordering of organic channel semiconductor in organic thin-film transistors (OTFTs), leading to a significant improvement in transistor performance. Mobility of up to 0.18 cm2/V s...

  • Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films. Kline, R. Joseph; DeLongchamp, Dean M.; Fischer, Daniel A.; Lin, Eric K.; Heeney, Martin; McCulloch, Iain; Toney, Michael F. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062117 

    The authors report a significant dependence of the morphology and charge carrier mobility of poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) films on the substrate surface chemistry upon heating into its liquid crystal phase. In contrast with films on bare silicon oxide...

  • Enhanced Air Stability of Organic Thin-Film Transistors with Optimally Cured Polymer Dielectric Layers. Lin, S. W.; Sun, Y. M.; Song, A. M. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p841 

    Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. A thin dielectric layer of polymethylmethacrylate (PMMA) was embedded between the silicon dioxide substrate and the active P3HT channel. PMMA...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics