TITLE

All jet-printed polymer thin-film transistor active-matrix backplanes

AUTHOR(S)
Arias, A. C.; Ready, S. E.; Lujan, R.; Wong, W. S.; Paul, K. E.; Salleo, A.; Chabinyc, M. L.; Apte, R.; Street, Robert A.; Wu, Y.; Liu, P.; Ong, B.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340 μm pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06 cm2/Vs, on/off ratios of 106, and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays.
ACCESSION #
14909433

 

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