TITLE

Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image

AUTHOR(S)
Datta, R.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3411
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we demonstrate a transmission electron microscope based technique which reveals all types of threading dislocations (TDs) in GaN with high contrast over a relatively large area, even if the specimen is bent. This method uses a bright-field image with the crystal oriented at the <1–21–3> zone axis, taken using multi-beam diffraction conditions. Such an image reveals all screw, edge, and mixed types of threading dislocations. The multi-beam imaging technique described here for GaN is more generally applicable to counting the total dislocation density in a wide range of materials and structures.
ACCESSION #
14803343

 

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