TITLE

Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

AUTHOR(S)
Northrup, J.E.; Neugebauer, J.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature thermodynamics approach. Hydrogen has an extremely high affinity for the N-face surface: Even under ultrahigh vacuum conditions as realized in molecular beam epitaxial growth, with a residual hydrogen pressure of 10-12 atm, the hydrogen terminated surface is, for very N-rich conditions, more stable than any clean surface. A transition to a surface covered by a Ga adlayer is predicted to occur as the Ga chemical potential increases. In typical metalorganic chemical vapor deposition conditions the (000-1) surface is predicted to be covered by 0.75 monolayers of hydrogen. The slower growth rate on the (000-1) surface in comparison to the (0001) surface is attributed to low adsorption of N on the H-covered (000-1) surface.
ACCESSION #
14803337

 

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