Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes

Satake, A.; Tanigawa, K.; Kimura, T.; Fujiwara, K.; Sano, N.
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3483
Academic Journal
We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ∼0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1-xAs quantum-well regions.


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