Spin injection from Fe3Si into GaAs

Kawaharazuka, A.; Ramsteiner, M.; Herfort, J.; Schönherr, H.-P.; Kostial, H.; Ploog, K. H.
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3492
Academic Journal
We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.


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