The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode

Wen-Tai Lu; Po-Ching Lin; Tiao-Yuan Huang; Chao-Hsin Chien; Ming-Jui Yang; Ing-Jyi Huang; Lehnen, Peer
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3525
Academic Journal
The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2/SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (ΔVfb) is mainly caused by the trap filling instead of the trap creation [Zafar et al., J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode.


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