Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates

Raz, T.; Shuall, N.; Bahir, G.; Ritter, D.; Gershoni, D.; Chu, S.N.G.
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3578
Academic Journal
The photoluminescence spectrum of small self-assembled In(Ga)As quantum dots grown on InP substrates is composed of distinct spectral lines. These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium atoms into the self-assembled quantum dots. We demonstrate that substantial amounts of gallium atoms diffuse from a strained GaInP layer underneath the quantum dots into the quantum dots.


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