Reach-through band bending in semiconductor thin films

Roussillon, Y.; Giolando, D.M.; Karpov, V.G.; Shvydka, Diana; Compaan, A.D.
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3617
Academic Journal
We describe a phenomenon of reach-through band bending in thin film semiconductors. It occurs through generation of defects that change the semiconductor work function. This translates the effect of the metal presence through the semiconductor film and induces a Schottky barrier in another semiconductor tangent to the film on the opposite side (reach-through band bending). We have found experimental evidence of this effect in CdTe photovoltaics.


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