Mechanism of apatite formation on hydrogen plasma-implanted single-crystal silicon

Xuanyong Liu; Fu, Ricky K.Y.; Chu, Paul K.; Chuanxian Ding
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3623
Academic Journal
Hydrogen is implanted into single-crystal silicon wafers using plasma ion immersion implantation to improve the surface bioactivity and the mechanism of apatite formation is investigated. Our micro-Raman and transmission electron microscopy results reveal the presence of a disordered silicon surface containing Si–H bonds after hydrogen implantation. When the sample is immersed in a simulated body fluid, the Si–H bonds on the silicon wafer initially react with water to produce a negatively charged surface containing the functional group (=Si–O-) that subsequently induces the formation of apatite. A good understanding of the formation mechanism of apatite on hydrogen implanted silicon is not only important from the viewpoint of biophysics but also vital to the actual use of silicon-based microchips and MEMS inside a human body.


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