Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film

Wensha Yang; Hamers, Robert J.
October 2004
Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3626
Academic Journal
We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal behavior characteristic of field-effect transistors. The biomolecular recognition and specificity characteristics were tested using the two antibodies anti IgM and anti-IgG. Electrical measurements show that the Bio-FET device made on an IgG-modified diamond exhibits a response specific to the anti-IgG antibody. Our results demonstrate the ability to fabricate a bio-FET device using a biologically modified diamond thin film.


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