Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Jin, Peng; Li, C. M.; Zhang, Z. Y.; Liu, F. Q.; Chen, Y. H.; Ye, X. L.; Xu, B.; Wang, Z. G.
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2791
Academic Journal
Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots (QDs), which are grown at relative low temperature (460°C) and embedded in GaAs p–i–n structure, have been studied by dc-biased electroreflectance. Franz–Keldysh oscillations from the undoped GaAs layer are used to determine the electric field under various bias voltages. Stark shift of -34 meV for the ground-state interband transition of the QDs is observed when the electric field increases from 105 to 308 kV/cm. The separation of the electron and hole states in the growth direction of 0.4 nm, corresponding to the built-in dipole moment of 6.4×10-29 C m, is determined. It is found that the electron state lies above that of the hole, which is the same as that predicted by theoretical calculations for ideal pyramidal InAs QDs.


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