TITLE

High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

AUTHOR(S)
Chen, Guan-Ting; Pan, Chang-Chi; Fang, Chi-Shin; Huang, Tzu-Chien; Chyi, Jen-Inn; Chang, Mao-Nan; Huang, Sheng-Bang; Hsu, Jung-Tsung
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2797
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermal stability, optical reflectivity, and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity (<2×10-2 Ω cm2) and reflectivity (>76%) after long-term annealing at 150 °C in nitrogen ambient. According to the results of the secondary ion mass spectroscopy study, it is suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment.
ACCESSION #
14713381

 

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