Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering

Katsuno, T.; Nitta, S.; Habuchi, H.; Stolojan, V.; Silva, S. R. P.
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2803
Academic Journal
We report on the growth of amorphous carbon nitride films (a-CNx) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CNx:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 105, defined as the ratio of the photoconductivity σp to the dark conductivity σd and is the highest value reported thus far. We believe that the carriers generated by the monochromatic light (photon energy 6.2 eV) in the a-CNx:LL films are primarily electrons, with the photoconductivity shown to increase with substrate deposition temperature.


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