Control of flatband voltage of Si-based metal–oxide–semiconductor diodes by inclusion of cesium ions in silicon dioxide

Kobayashi, Takuya; Tanaka, Kazuki; Maida, Osamu; Kobayashi, Hikaru
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2806
Academic Journal
The flatband voltage of Si-based metal–oxide–semiconductor diodes can be controlled by the inclusion of cesium (Cs) in SiO2 layers. The inclusion of Cs can be achieved by two methods: (1) spin-on of cesium chloride aqueous solutions, and (2) evaporation of Cs. The maximum flatband voltage shift of ∼0.8 V is achieved by the Cs evaporation method and, in this case, the Cs concentration is estimated to be ∼1013 atoms/cm2 from total reflection x-ray fluorospectroscopy measurements. Even when the Cs concentration is as low as ∼1010 atoms/cm2, ∼0.1 V flatband voltage shift can be achieved. The net positive charge of Cs decreases with the Cs concentration.


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