Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Yu, Xiongfei; Zhu, Chunxiang; Li, M. F.; Chin, Albert; Du, A. Y.; Wang, W. D.; Kwong, Dim-Lee
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2893
Academic Journal
The thermal stability and electrical characteristics of HfTaO gate dielectric with polycrystalline-silicon gate have been investigated. The incorporation of Ta into HfO2 enhances the crystallization temperature of film dramatically. Transmission electron microscopy micrographs confirm that HfTaO with 43% Ta film remains amorphous even after activation annealing at 950 °C for 30 s, and the formation of low-κ interfacial layer is observably reduced. The capacitance–voltage curve of metal–oxide–semiconductor capacitor using HfTaO gate dielectric fits well with simulated curve, indicating good interface property between HfTaO and substrate. In addition, the boron penetration behaviors of HfTaO films are sufficiently suppressed as manifested by the narrow flat-band voltage shift. The negligible flat-band voltage shift in HfTaO with 43% Ta film is observed and attributed to its amorphous structure after device fabrication.


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