Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy

Ng, C. Y.; Chen, T. P.; Lau, H. W.; Liu, Y.; Tse, M. S.; Tan, O. K.; Lim, V. S. W.
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2941
Academic Journal
In this work, we report a mapping of charge transport in silicon nanocrystals (nc-Si) embedded in SiO2 dielectric films with electrostatic force microscopy. The charge diffusion from chargednc-Si to neighboring uncharged nc-Si in the SiO2 matrix is found to be the dominant mechanism for the decay of the trapped charge in the nc-Si. The trapped charge and the charge decay have been determined quantitatively from the electrical force measurement. An increase in the area of the charge cloud due to the charge diffusion has been observed clearly. In addition, the blockage and acceleration of charge diffusion by the neighboring charges with the same and opposite charge signs (i.e., positive or negative), respectively, have been observed.


Related Articles

  • Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons. Chao, Y.; Krishnamurthy, S.; Montalti, M.; Lie, L. H.; Houlton, A.; Horrocks, B. R.; Kjeldgaard, L.; Dhanak, V. R.; Hunt, M. R. C.; Šiller, L. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044316 

    Alkyl-modified silicon nanocrystallites are efficient fluorophores which are of interest for fundamental spectroscopic studies and as luminescent probes in biology because of their stability in aqueous media. In this work we have investigated these particles using scanning tunneling microscopy,...

  • The Production and Electrical Characterization of Free-Standing Cubic Single-Crystal Si Nanoparticles. Campbell, S. A.; Kortshagen, U.; Bapat, A.; Dong, Y.; Hilchie, S.; Shen, Z. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Oct2004, Vol. 56 Issue 10, p26 

    This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build devices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This...

  • Fractal Growth Of Silicon Nanocrystallites During Pulsed Laser Ablation. Umezu, Ikurou; Inada, Mitsuru; Makino, Toshiharu; Sugimura, Akira // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p43 

    Surface hydrogenated silicon nanocrystallites were prepared by PLA in hydrogen gas. The deposits are aggregated and they are composed of primary particles which mean diameter is about 4–5 nm. The fractal dimension of deposits was analyzed by box counting method. The fractal dimension...

  • Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements. Garín, M.; Martín, I.; Bermejo, S.; Alcubilla, R. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p123716 

    Depletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region electrostatically induced by fixed charges within the dielectric. This...

  • Electrical and optical characteristics of silicon nanocrystal solar cells. Sang-Kyun Kim; Chang-Hee Cho; Baek-Hyun Kim; Park, Seong-Ju; Jae Won Lee // Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143120 

    We investigated the relationship between the absorption in silicon nanocrystals (Si NCs) and the photocurrent of Si NC solar cells. Here, the absorption of Si NCs in the blue and green light regions was enhanced by up to 14 times compared to bulk Si. In addition, the photocurrent in Si NC solar...

  • Photoluminescence decay dynamics of noninteracting silicon nanocrystals. Guillois, O.; Herlin-Boime, N.; Reynaud, C.; Ledoux, G.; Huisken, F. // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3677 

    Time-resolved photoluminescence measurements on size-selected silicon nanocrystals have been carried out in order to elucidate the nonexponential behavior of the photoluminescence decay kinetics. The nanoparticles are gas-phase synthesized, extracted as a supersonic beam, size selected, and...

  • Charge injection and trapping in silicon nanocrystals. Rafiq, M. A.; Tsuchiya, Y.; Mizuta, H.; Oda, S.; Uno, Shigeyasu; Durrani, Z. A. K.; Milne, W. I. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p182101 

    The temperature dependence of the conduction mechanism in thin films of ∼8 nm diameter silicon nanocrystals is investigated using Al/Si nanocrystal/p-Si/Al diodes. A film thickness of 300 nm is used. From 300 to 200 K, space charge limited current, in the presence of an exponential...

  • Magnetic Properties of 3d-Metal Nanocrystalline Films. Frolov, G.I. // Technical Physics;Jul2004, Vol. 49 Issue 7, p909 

    The problem of designing high-resistivity soft magnetic materials based on 3d-metal nanocrystalline films is discussed. To increase the electrical resistivity, nanogranular composites are proposed; they consist of superparamagnetic particles embedded into a dielectric matrix. To obtain the...

  • Charge retention characteristics of silicon nanocrystal layers by ultrahigh vacuum atomic force microscopy. Feng, Tao; Miller, Gerald; Atwater, Harry A. // Journal of Applied Physics;8/1/2007, Vol. 102 Issue 3, p034305 

    The nanoscale charge retention characteristics of both electrons and holes in SiO2 layers containing silicon nanocrystals were investigated with ultrahigh vacuum conductive-tip noncontact atomic force microscopy. The results revealed much longer hole retention time (e.g., >1 day) than that of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics