Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes

Kang, B. S.; Kim, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N.G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
October 2004
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2962
Academic Journal
AlGaN/GaN high-electron-mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric-polarization-induced two-dimensional electron gas. The spontaneous and piezoelectric-polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of pressure changes. The changes in the conductance of the channel of a AlGaN/GaN high electron mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The conductivity of the channel shows a linear change of -(+)6.4×10-2 mS/bar for application of compressive (tensile) strain. The AlGaN/GaN HEMT membrane-based sensors appear to be promising for pressure sensing applications.


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