TITLE

Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes

AUTHOR(S)
Kang, B. S.; Kim, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N.G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2962
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlGaN/GaN high-electron-mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric-polarization-induced two-dimensional electron gas. The spontaneous and piezoelectric-polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of pressure changes. The changes in the conductance of the channel of a AlGaN/GaN high electron mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The conductivity of the channel shows a linear change of -(+)6.4×10-2 mS/bar for application of compressive (tensile) strain. The AlGaN/GaN HEMT membrane-based sensors appear to be promising for pressure sensing applications.
ACCESSION #
14713326

 

Related Articles

  • Characteristics of an electroless plated-gate transistor. Li-Yang Chen; Huey-Ing Chen; Chien-Chang Huang; Yi-Wen Huang; Tsung-Han Tsai; Yi-Chun Liu; Tai-You Chen; Shiou-Ying Cheng; Wen-Chau Liu // Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052105 

    Temperature-dependent characteristics of an interesting pseudomorphic high electron mobility transistor with an electroless plated (EP) gate metal are studied and demonstrated. Under the low-temperature and low-energy electrochemical deposition conditions, the EP deposition technique provides an...

  • Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Motayed, Abhishek; Vaudin, Mark; Davydov, Albert V.; Melngailis, John; He, Maoqi; Mohammad, S. N. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p043104 

    The authors report transport property measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. Room temperature field effect electron mobilities as high as 319 cm2 V-1 s-1 were...

  • THz Double-Grating Gate Transistor Detectors in High Magnetic Fields. BUT, D.; DYAKONOVA, N.; COQUILLAT, D.; TEPP, F.; KNAP, W.; WATANABE, T.; TANIMOTO, Y.; BOUBANGA TOMBET, S.; OTSUJI, T. // Acta Physica Polonica, A.;Dec2012, Vol. 122 Issue 6, p1080 

    Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using...

  • Z-contrast imaging of AlN exclusion layers in GaN field-effect transistors. Wallis, D. J.; Balmer, R. S.; Keir, A. M.; Martin, T. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042101 

    The structural characteristics of AlN exclusion layers used to enhance the electron mobility in GaN-based field-effect transistor structures are investigated using scanning transmission electron microscopy. It is shown that a peak in electron mobility is achieved for an AlN exclusion layer with...

  • Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator. Liu, Z. H.; Ng, G. I.; Arulkumaran, S.; Maung, Y. K. T.; Teo, K. L.; Foo, S. C.; Sahmuganathan, V. // Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223501 

    The effects of Al2O3 gate insulator grown by atomic layer deposition (ALD) system on the two-dimensional electron gas (2DEG) transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. The shape of the electron lateral...

  • Postprocessing annealing effects on direct current and microwave performance of AlGaN/GaN high electron mobility transistors. Lee, Jaesun; Dongmin Liu; Hyeongnam Kim; Wu Lu // Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2631 

    The effects of postprocessing annealing on direct current, radio frequency small signal and power performances of AIGaN/GaN high electron mobility transistors with a gate-length of 0.2 μm were investigated. The postannealing technique can improve the device perfomance, especially, after 10...

  • Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors. Zhiyong Fan; Xiaogang Wen; Shihe Yang; Lu, Jia G. // Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p013113 

    Pure α-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition,...

  • Modulation doping in ZnO nanorods for electrical nanodevice applications. Jinkyoung Yoo; Chul-Ho Lee; Yong-Joo Doh; Hye Seong Jung; Gyu-Chul Yi // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223117 

    We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications....

  • Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors. Chung, J. W.; Zhao, X.; Wu, Y.-R.; Singh, J.; Palacios, T. // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p093502 

    The drain delay in AlGaN/GaN submicron high electron mobility transistors (HEMTs) accounts for almost 25% of the total electron delay. This long delay significantly limits the maximum frequency performance and linearity of these devices. This paper studies the origin of this important delay...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics