Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

Xi, Y.; Schubert, E. F.
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2163
Academic Journal
A theoretical model for the dependence of the diode thrward voltage (VÆ’) on junction temperature (Tj) is developed. An expression tbr dVÆ’/dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the band-gap energy, and the effective density of states. Experimental results on the junction temperature of GaN ultraviolet light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage (dVÆ’/dT) is found. A linear relation between the junction temperature and the forward voltage is found.


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