TITLE

Electromigration-driven motion of morphologically stable voids in metallic thin films: Universal scaling of migration speed with void size

AUTHOR(S)
Cho, Jaeseol; Gungor, M. Rauf; Maroudas, Dimitrios
PUB. DATE
September 2004
SOURCE
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2214
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dependence on void size of the migration speed of morphologically stable voids that translate along metallic thin films due to surface electromigration is analyzed in finite-width films through self-consistent numerical simulations taking surface diffusional anisotropy into account. It is shown that, as the morphological stability limit is approached, the void migration speed deviates substantially from being inversely proportional to the void size. A nonlinear ‘shape function’ that includes both current crowding and diffusional anisotropy effects is derived and incorporated into the well-known theoretical result that is valid for infinite-conductor domains and isotropic surface diffusivity. Rescaling the void migration velocity with the corresponding, numerically evaluated shape function results in a universally valid relationship for the migration speed as a function of void size. This result is important in understanding electromigration-induced void dynamics in metallic interconnect lines.
ACCESSION #
14546715

 

Related Articles

  • Study of electromigration in thin tin film using edge displacement method. Yu, H. C.; Liu, S. H.; Chen, Chih // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p013540 

    Threshold current density and other electromigration parameters of pure Sn films were measured using edge displacement method. Sn film with a thickness of 5000 Ã… was evaporated on a 1200-Ã…-thick Ti film on a Si substrate. Electromigration behavior was investigated under the current...

  • Electromigration-induced grain rotation in anisotropic conducting beta tin. Wu, Albert T.; Gusak, A. M.; Tu, K. N.; Kao, C. R. // Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241902 

    Electromigration in beta-Sn has shown a 10% drop of resistance due to the anisotropic properties of the material. The drop was proposed due to reorientation of grains to reduce the resistance. The driving force as well as the atomic mechanism of grain rotation under electromigration has been...

  • Current-driven interactions between voids in metallic interconnect lines and their effects on line electrical resistance. Jaeseol Cho; Rauf Gungor, M.; Maroudas, Dimitrios // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p221905 

    We present a theoretical analysis based on self-consistent numerical simulations of current-driven interactions between voids in metallic thin-film interconnects and the resulting void migration, morphological evolution, and coalescence phenomena. The analysis reveals the complex nature of...

  • Electromigration Failure of Metal Lines. Abé, Hiroyuki; Sasagawa, Kazuhiko; Saka, Masumi // International Journal of Fracture;Mar2006, Vol. 138 Issue 1-4, p219 

    With the scaling down process of microcircuits in semiconductor devices, the density of electric current in interconnecting metal lines increases, and the temperature of the device itself rises. Electromigration is a phenomenon that metallic atoms constructing the line are transported by...

  • Effects of electromigration-induced void dynamics on the evolution of electrical resistance in metallic interconnect lines. Cho, Jaeseol; Gungor, M. Rauf; Maroudas, Dimitrios // Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241905 

    The effects of void dynamics under electromigration conditions on the electrical resistance evolution in metallic thin-film interconnects are examined based on self-consistent dynamical simulations. Changes in the interconnect line resistance are found to depend strongly on...

  • Surface morphological evolution on single crystal films by strong anisotropic drift diffusion under capillary and electromigration forces. Ogurtani, Tarik Omer; Celik, Aytac // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p043504 

    The morphological evolution of voids at unpassivated surfaces and the sidewalls of single crystal metallic films is investigated via computer simulations by using a mathematical model based on fundamental postulates of irreversible thermodynamics. The effect of drift-diffusion anisotropy on the...

  • Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers. Lebedev, V.; Cimalla, V.; Baumann, T.; Ambacher, O.; Morales, F. M.; Lozano, J. G.; González., D. // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p094903 

    The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron...

  • Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network. Lebedev, V.; Cimalla, V.; Pezoldt, J.; Himmerlich, M.; Krischok, S.; Schaefer, J. A.; Ambacher, O.; Morales, F. M.; Lozano, J. G.; González, D. // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p094902 

    The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution...

  • Lead-free: Electrical Influence on Tin Whisker Growth. Fukuda, Yuki; Osterman, Michael; Pecht, Michael // SMT: Surface Mount Technology;Sep2006, Vol. 20 Issue 9, p41 

    The article discusses the effects of an eight-month assessment of whisker growth on matte-tin-plated copper in the presence of a constant electrical current. A matte-tin-plated brass which uses four different levels current density and the use of a Blech structure for the accelerated...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics