Electromigration-driven motion of morphologically stable voids in metallic thin films: Universal scaling of migration speed with void size

Cho, Jaeseol; Gungor, M. Rauf; Maroudas, Dimitrios
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2214
Academic Journal
The dependence on void size of the migration speed of morphologically stable voids that translate along metallic thin films due to surface electromigration is analyzed in finite-width films through self-consistent numerical simulations taking surface diffusional anisotropy into account. It is shown that, as the morphological stability limit is approached, the void migration speed deviates substantially from being inversely proportional to the void size. A nonlinear ‘shape function’ that includes both current crowding and diffusional anisotropy effects is derived and incorporated into the well-known theoretical result that is valid for infinite-conductor domains and isotropic surface diffusivity. Rescaling the void migration velocity with the corresponding, numerically evaluated shape function results in a universally valid relationship for the migration speed as a function of void size. This result is important in understanding electromigration-induced void dynamics in metallic interconnect lines.


Related Articles

  • Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers. Lebedev, V.; Cimalla, V.; Baumann, T.; Ambacher, O.; Morales, F. M.; Lozano, J. G.; González., D. // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p094903 

    The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron...

  • Study of electromigration in thin tin film using edge displacement method. Yu, H. C.; Liu, S. H.; Chen, Chih // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p013540 

    Threshold current density and other electromigration parameters of pure Sn films were measured using edge displacement method. Sn film with a thickness of 5000 Ã… was evaporated on a 1200-Ã…-thick Ti film on a Si substrate. Electromigration behavior was investigated under the current...

  • ELASTIC ANISOTROPY OF HCP METAL CRYSTALS AND POLYCRYSTALS. Tromans, Desmond // International Journal of Research & Reviews in Applied Sciences;2011, Vol. 6 Issue 4, p462 

    The monocrystal elastic behaviours of twenty four hexagonal close packed (HCP) metals at room temperature are reviewed based on published values of their monocrystal elastic constants. In particular, the angular variation of the Young's Modulus (E) and the Rigidity (Shear) Modulus (G) are...

  • Effects of orientation transition on exchange anisotropy of Co/NiMn films by biorientation epitaxial Cu/Au/Cu underlayers. Chih-Huang Lai; Yung-Hung Wang; Huang, R. T. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2298 

    A biorientation structure of Co/NiMn films, composed of columnar (001) and (111) epitaxial grains, was developed by using Cu/Au/Cu underlayers on Si substrates. When the Au layer is thinner than 7.5 Ã…, Co/NiMn films are epitaxial (001) and show exchange fields of 50 Oe for 150 Ã… Co. When...

  • Electromigration-induced grain rotation in anisotropic conducting beta tin. Wu, Albert T.; Gusak, A. M.; Tu, K. N.; Kao, C. R. // Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241902 

    Electromigration in beta-Sn has shown a 10% drop of resistance due to the anisotropic properties of the material. The drop was proposed due to reorientation of grains to reduce the resistance. The driving force as well as the atomic mechanism of grain rotation under electromigration has been...

  • Enhancement in ordering of FePt films by magnetic field annealing. Wang, H. Y.; Ma, X. K.; He, Y. J.; Mitani, S.; Motokawa, M. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2304 

    Effect of magnetic field annealing on chemical ordering of FePt films has been investigated. It is found that the ordering rate in FePt films is enhanced by applying a magnetic field during postdeposition annealing. Measurements of the structure and magnetic properties of FePt films reveal that...

  • Current-driven interactions between voids in metallic interconnect lines and their effects on line electrical resistance. Jaeseol Cho; Rauf Gungor, M.; Maroudas, Dimitrios // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p221905 

    We present a theoretical analysis based on self-consistent numerical simulations of current-driven interactions between voids in metallic thin-film interconnects and the resulting void migration, morphological evolution, and coalescence phenomena. The analysis reveals the complex nature of...

  • Correlation functions and optical effects in surface layers of polymer films. Maksimov, A. V.; Kusheva, I. V.; Maksimova, O. G. // Crystallography Reports;Sep2010, Vol. 55 Issue 5, p837 

    The calculated dependences of the quadrupole orientation order parameter on the Kuhn segment length adequately describe the experimental data obtained by the birefringence method for multilayer polymer films. The transverse orientation correlations of chain segments decrease according to a power...

  • Photo-assisted molecular engineering in solution-processed organic thin-film transistors with a blended semiconductor for high mobility anisotropy. Park, Jaehoon; Keum, Chang-Min; Kim, Jae-Hyun; Lee, Sin-Doo; Payne, Maricia; Petty, Michael; Anthony, John. E.; Bae, Jin-Hyuk // Applied Physics Letters;1/7/2013, Vol. 102 Issue 1, p013306 

    This paper reports a viable method for enhancing mobility anisotropy in solution-processed organic thin-film transistors (TFTs) by irradiating linearly polarized ultraviolet (LPUV) light onto a 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/poly (vinyl cinnamate) (PVCi) blended...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics