Comparison of large-scale layer-relaxation simulations with experiment

Schwarz, K. W.; Cai, J.; Mooney, P. M.
September 2004
Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2238
Academic Journal
Recent experiments on the strain relaxation of SiGe layers are related to basic dislocation theory via numerical calculations based on discrete dislocation dynamics. Excellent quantitative agreement is obtained, demonstrating that such technologically interesting problems can be treated on a fundamental level.


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